The applet simulates electron transport in a semiconductor device constructed as a three-layer gallium arsenide–gallium aluminum arsenide (GaAs–Ga1–xAlxAs) sandwich. The GaAs layer constitutes a potential well between two confining barriers that are formed from the GaAs matrix by doping with about 30% Al content. The device is modeled using the double-barrier potential energy V(x) shown in the applet. The barriers are 0.25 eV high and 5.0 nm wide, with a gap of equal width separating them; the effective mass for electrons in GaAs is 34.24 keV/c2 [see Am. J. Phys. 62(2), 143 (1994)]. These values appear on the Math tab of the applet (the barrier/gap width is a – b). On the Graphics: [x] tab the double-barrier potential energy V(x) is plotted over the interval [–20 nm, +20 nm]. The listing to the right of the graph includes a placeholder for a single scattering (stationary) state of the electron in this environment; the energy of this state is adjustable. Unusually large transmission (resonant tunneling) through the device occurs when the electron energy coincides with the energy of a bound state in the well formed by the two barriers. In this exercise, we will determine the lowest electron energy that results in peak transmission, and investigate the width of the resonance. [In practice, the electron energy is fixed (at the Fermi energy of GaAs) and the device is 'tuned' to resonance by applying a suitable bias voltage that alters the bound state energies in the central well.]
Instructions for use |